2n2221 2N2222 npn silicon transistor description: the central semiconductor 2n2221, 2N2222 types are silicon npn epitaxial planar transistors designed for small signal, general purpose switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5.0 v continuous collector current i c 800 ma power dissipation p d 400 mw power dissipation (t c =25c) p d 1.2 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 438 c/w thermal resistance jc 146 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =50v - 10 na i cbo v cb =50v, t a =150c - 10 a i ebo v eb =3.0v - 10 na bv cbo i c =10a 60 - v bv ceo i c =10ma 30 - v bv ebo i e =10a 5.0 - v v ce(sat) i c =150ma, i b =15ma - 0.4 v v ce(sat) i c =500ma, i b =50ma - 1.6 v v be(sat) i c =150ma, i b =15ma 0.6 1.3 v v be(sat) i c =500ma, i b =50ma - 2.6 v f t v ce =20v, i c =20ma, f=100mhz 250 - mhz c ob v cb =10v, i e =0, f=100khz - 8.0 pf c ib v eb =0.5v, i c =0, f=100khz - 30 pf to-18 case r1 (30-january 2012) www.centralsemi.com
2n2221 2N2222 npn silicon transistor to-18 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) 2n2221 2N2222 symbol test conditions min max min max h fe v ce =10v, i c =0.1ma 20 - 35 - h fe v ce =10v, i c =1.0ma 25 - 50 - h fe v ce =10v, i c =10ma 35 - 75 - h fe v ce =10v, i c =10ma, t a =-55c 15 - 35 - h fe v ce =10v, i c =150ma 40 120 100 300 h fe v ce =1.0v, i c =150ma 20 - 50 - h fe v ce =10v, i c =500ma 25 - 40 - www.centralsemi.com r1 (30-january 2012)
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